Method and apparatus for performing extraction on an integrated circuit design with support vector machines

ABSTRACT

The present invention introduces novel methods of performing integrated circuit layout extraction. In the system of the present invention, a complex extraction problem is first broken down into a set of smaller extraction sub problems. Some of the smaller extraction sub problems may be handled by simple parametric models. However, for the frequent complex extraction sub problems, machine learning is used to build models. Specifically, Support Vector Machines are constructed to extract the desired electrical characteristics. To build the Support Vector Machines, Experimental design is employed to select a set of training points that provide the best information. In one embodiment, the training point set is created by creating a critical input spanning set, adding training points from critical regions in the input space, and adding training points from frequently encountered profile cases. The training point set is then used to train the Support Vector Machine that will extract electrical characteristics for the extraction sub problem.

RELATED APPLICATIONS

The present patent application is a continuation in-part of the U.S.patent application entitled “Method and Apparatus for PerformingExtraction Using Machine Learning” filed on Jan. 31, 2002 having Ser.No. 10/062,264.

FIELD OF THE INVENTION

The present invention relates to the field of semiconductor design,semiconductor design testing, and semiconductor manufacture. Inparticular the present invention discloses methods for performingextraction in order to estimate various electrical and physicalproperties of semiconductor integrated circuit designs.

BACKGROUND OF THE INVENTION

Complex digital integrated circuits (“ICs”) are initially designed usinghigh-level logic elements such as adders, arithmetic/logic units (ALUs),memory units, buses, etc. These high level elements are in turnconstructed from lower level components such as AND gates, OR gates,inverters, etc. These lower level components are constructed from basicelectronic components such as transistors, diodes, and electricalconductive traces. All of these electronic and circuit components of ICsare jointly referred to as “components.”

Design engineers design an integrated circuit by transforming a circuitdescription of the integrated circuit into geometric descriptions ofphysical components that create the basic electronic components. Thedetailed geometric descriptions of physical components are referred toas integrated circuit layouts.

To create the integrated circuit layout for a complex integratedcircuit, circuit design engineers use a suite of Electronic DesignAutomation (“EDA”) application programs. These EDA application programsare computer-based tools for creating, editing, testing, and analyzingintegrated circuit design layouts.

An integrated circuit designer uses a set of layout EDA applicationprograms to create a physical integrated circuit design layout from alogical circuit design. The layout EDA application uses geometric shapesof different materials to create the various electrical components on anintegrated circuit. For instance, EDA tools commonly use rectangularlines to represent the passive wire segments (conductors) thatinterconnect the active integrated circuit components such astransistors. These EDA tools also represent electronic and circuit ICcomponents as geometric objects with varying shapes and sizes.

After an integrated circuit designer has created an initial integratedcircuit layout, the integrated circuit designer then tests and optimizesthe integrated circuit layout using a set of EDA testing and analysistools. Common testing and optimization steps include extraction,verification, and compaction. The steps of extraction and verificationare performed to ensure that the integrated circuit layout will performas desired. The test of extraction is the process of analyzing thegeometric layout and material composition of an integrated circuitlayout in order to “extract” the electrical characteristics of thedesigned integrated circuit layout. The step of verification uses theextracted electrical characteristics to analyze the circuit design usingcircuit analysis tools.

Common electrical characteristics that are extracted from an integratedcircuit layout include capacitance and resistance of the various “nets”(electrical interconnects) in the integrated circuit. These electricalcharacteristics are sometimes referred to as “parasitic” since these areelectrical characteristics are not intended by the designer but resultfrom the underlying physics of the integrated circuit design.

For example, when an integrated circuit designer wishes to connect twodifferent locations of an integrated circuit with an electricalconductor, the electrical circuit designer would ideally like perfectconductor with zero resistance and zero capacitance. However, thegeometry of a real conductor, its material composition, and itsinteraction with other nearby circuit elements will create someparasitic resistance and parasitic capacitance. The parasitic resistanceand parasitic capacitance affect the operation of the designedintegrated circuit. Thus, the effect of the parasitic resistance andparasitic capacitance on the electrical interconnect must be considered.

To test an integrated circuit layout, the integrated circuit designer‘extracts’ parasitic resistance and parasitic capacitance from theintegrated circuit layout using an extraction application program. Then,the integrated circuit designer analyzes and possibly simulates theintegrated circuit using the extracted parasitic resistance andparasitic capacitance information. If the parasitic resistance orparasitic capacitance causes undesired operation of the integratedcircuit, then the layout of the integrated circuit must be changed tocorrect the undesired operation. Furthermore, minimizing the amount ofparasitic resistance and parasitic capacitance can optimize theperformance of the integrated circuit by reducing power consumption orincreasing the operating speed of the integrated circuit.

Extracting the electrical characteristics of the integrated circuitlayout (such as capacitance, resistance, and inductance) is an extremelydifficult task. Most existing extraction systems approximate sections ofan integrated circuit with similar geometric configurations having knownelectrical characteristics. Interpolation between various differentsimilar geometric configurations is used to further refine extractedelectrical characteristics.

These existing extraction techniques have been adequate but areincreasingly becoming problematic as the feature size of the electricalcomponents on integrated circuits grow ever smaller. With the very smallfeature size of current and upcoming semiconductor processes, theaccurate extraction of electrical characteristics from integratedcircuit layouts becomes critical. Thus, it would be desirable toimplement new integrated circuit extraction methods that are bothaccurate and fast.

SUMMARY OF THE INVENTION

The present invention introduces novel methods of performing integratedcircuit layout extraction. In the system of the present invention, acomplex extraction problem is first broken down into a set of smallerextraction sub problems. Some of the smaller extraction sub problems maybe handled by simple parametric models. For example, extracting theresistance from a straight section of interconnect wire may be performedby multiplying a known resistance per unit length by the length of thestraight section of interconnect wire.

For more complex extraction sub problems, machine learning is used tobuild models. In one embodiment, Support Vector Machines are constructedto extract the desired electrical characteristics. To build the SupportVector Machines, Experimental design is employed to select a set oftraining points that provide the best information. In one embodiment,the training point set is created by creating a critical input spanningset, adding training points from critical regions in the input space,and adding training points from frequently encountered profile cases.The training point set then used to train the Support Vector Machinethat will extract electrical characteristics for the extraction subproblem.

Other objects, features, and advantages of present invention will beapparent from the company drawings and from the following detaileddescription.

BRIEF DESCRIPTION OF THE DRAWINGS

The objects, features, and advantages of the present invention will beapparent to one skilled in the art, in view of the following detaileddescription in which:

FIG. 1 illustrates a conceptual diagram that describes the overall flowof a system implemented using the present invention.

FIG. 2 illustrates a flow diagram that describes how the presentinvention creates a nonparametric model used for extraction.

FIG. 3 illustrates a flow diagram that describes how an extractionsystem may use the extraction models of present invention during theextraction of electrical characteristics from a semiconductor design.

FIG. 4 graphically illustrates a linear support vector machine used forregression.

FIG. 5 graphically illustrates a block diagram of a non linear supportvector machine used for regression.

FIG. 6 illustrates a semiconductor interconnect line 610 surrounded byfour other parallel interconnect lines, two on the same layer and two onthe above layer.

FIG. 7 illustrates one embodiment of a method that uses experimentaldesign to select optimal training data points.

FIG. 8 illustrates a capacitance extraction problem wherein aninterconnect line 820 is set between interconnect line 810 to the leftand interconnect line 830 to the right.

FIG. 9A illustrates a probability distribution for generating importantline spacings for the capacitance extraction problem of FIG. 8.

FIG. 9B illustrates a probability distribution for generating importantinterconnect line widths for the capacitance extraction problem of FIG.8.

FIG. 10 illustrates a capacitance extraction problem demonstratingprofile capacitance extraction cases.

FIG. 11A illustrates an ideal signal pulse.

FIG. 11B illustrates a circuit for modeling parasitic capacitance.

FIG. 11C illustrates the digital signal pulse of FIG. 11A after it hasbeen affected by capacitance.

FIG. 12A illustrates an ideal signal pulse.

FIG. 12B illustrates a real world signal pulse that did not reach itsfill voltage level due to parasitic capacitance.

FIG. 13A illustrates an example of interconnect wires arranged for anintegrated circuit layout.

FIG. 13B illustrates the interconnect wires of FIG. 13A with acapacitance effect “halo” drawn around critical net 1310.

FIG. 13C illustrates the interconnect wires of FIG. 13B with thecapacitance effect region around critical net 1310 highlighted.

FIG. 13D illustrates the calculation of the capacitance for a firsthorizontal section of critical net 1310.

FIG. 13E illustrates the calculation of the capacitance for a secondhorizontal section of critical net 1310.

FIG. 13F illustrates the calculation of the capacitance for a thirdhorizontal section of critical net 1310.

FIG. 13G illustrates the calculation of the capacitance for a fourthhorizontal section of critical net 1310.

FIG. 13H illustrates the calculation of the capacitance for a fifthhorizontal section of critical net 1310.

FIG. 14A illustrates a detailed three-dimensional view of interconnectwiring section 1381 of FIG. 13D.

FIG. 14B illustrates a two-dimensional cross section view ofinterconnect wiring section of FIG. 14A.

FIG. 15 illustrates a three-dimensional view of a section containing twolayers interconnect wiring.

FIG. 16 illustrates a three-dimensional view of a section containingthree layers interconnect wiring.

FIG. 17 illustrates a flow diagram describing a prior art method ofdetermining capacitance using capacitance tables and interpolation.

FIG. 18 illustrates a conceptual diagram describing how the presentinvention generates support vector machine models for capacitanceestimation and applies those support vector machine models.

FIG. 19 illustrates a flow diagram describing one embodiment ofgenerating support vector machine models for predicting the capacitanceof two-dimensional profiles.

FIG. 20 illustrates a flow diagram describing how support vector machinemodels may be used to extract the capacitance of a net in an integratedcircuit layout.

FIG. 21 illustrates a two-port corner shape for a resistance extractionsub problem.

FIG. 22 illustrates a three-port “T” shape for a resistance extractionsub problem.

FIG. 23 illustrates the two-port jog shape for a resistance extractionsub problem.

FIG. 24 and illustrates a four-port cross shape for a small resistanceextraction problem.

FIG. 25A illustrates a net with three end points P1, P2, and P3.

FIG. 25B illustrates the net of FIG. 25A after it has been divided intosimple rectangles and the extraction sub problems of FIGS. 21 to 24.

FIG. 25C illustrates the full list of sub extraction problems betweenendpoint P1 and endpoint P2 in the net of FIG. 25A.

FIG. 25D illustrates the full list of sub extraction problems betweenendpoint P1 and endpoint P2 in the net of FIG. 25A.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Methods for extracting electrical characteristics from integratedcircuit layouts using probabilistic models are disclosed. In thefollowing description, for purposes of explanation, specificnomenclature is set forth to provide a thorough understanding of thepresent invention. However, it will be apparent to one skilled in theart that these specific details are not required in order to practicethe present invention. For example, the present invention has primarilybeen described with reference to Support Vector Machines (SVM). However,the same techniques can easily be applied using other types of machinelearning systems.

Electrical Characteristic Extraction

Various different methods are used to extract electrical characteristicsfrom an integrated circuit layout. Each of the various different methodshas their own advantages and disadvantages.

Field Solvers

To extract a set of highly accurate electrical characteristics from anintegrated circuit layout, an EDA extraction application program mayapply field solvers. Field solvers discretize the integrated circuitlayout and accurately model the physical phenomena of the integratedcircuit components using the known laws of physics. The final outputfrom a field solver is a highly accurate determination of the electricalcharacteristics of an analyzed integrated circuit component.

Although field solvers are very accurate, is impractical to use fieldsolvers to extract the electrical characteristics from an entireintegrated circuit layout. Specifically, field solvers are extremelycomputationally intensive since millions of data points must beprocessed. Thus, any attempt to use field solvers to extract theelectrical characteristics from an entire integrated circuit layoutwould take an unacceptable amount of time.

Since field solvers are very accurate but painstakingly slow, fieldsolvers are generally only used to solve small test cases or criticalnets in an integrated circuit layout. Other means must be used toextract the electrical characteristics from the remainder of anintegrated circuit.

Simple Formulas and Pre-calculated Tables

Since field solvers are impractical to perform extraction on an entireintegrated circuit layout, most extraction systems greatly simplify theextraction problem such that extensive use of a field solver is notrequired. First, the integrated circuit layout is divided into smallpieces wherein each small piece contains a recognized primitivegeometric pattern. Then, the extraction system extracts electricalcharacteristics from the recognized primitive geometric pattern byapplying a simplified formula or using pre-calculated table for such aprimitive geometric pattern.

For example, an interconnect net may be divided into simple rectangularinterconnect line sections (as seen from above). Using a width of astraight interconnect line section and the height of the interconnectline (the metal layer thickness), a cross section shape and size of thestraight interconnect line section can be determined. Using shape andsize of the interconnect line cross-section and its materialcomposition, a simple resistance per unit length value may bedetermined. Finally, a resistance value for the straight interconnectline section may be extracted by multiplying the resistance per unitlength value (determined from the shape, size, and material compositionof the interconnect line cross section) by the length of theinterconnect line section. Thus, a simplified formula can be used toextract some electrical characteristics from an integrated circuitlayout.

Similarly, pre-calculated tables may also be used to simplify and speedup the extraction of electrical characteristics from an integratedcircuit layout. For example, to extract the capacitance from aninterconnect net, the length of an interconnect net may first be dividedinto different sections wherein each section has unvarying surroundingfeatures. Then, the known surrounding conditions for each differentsection are used to identify an appropriate pre-calculated table thatwill be used to extract the capacitance per unit length of that section.The pre-calculated capacitance tables are constructed by using a fieldsolver for the various different surrounding condition primitives.

For example, in one section of an interconnect net, an interconnect linemay pass over a ground plane. A pre-calculated table may specify thecapacitance of an interconnect wire passing over a ground plane forvarying distances between the interconnect line and the ground plane andfor varying widths of interconnect lines. Thus, the capacitance of sucha section may be extracted by selecting the proper table value using thedistance between the interconnect line and the ground plane and thewidth of interconnect line. If the pre-calculated table does not containan exact matching entry, then a value may be interpolated from theclosest matching entries that do exist in the pre-calculated table.

Both the application of simplified formulas and pre-calculated tableimprove the speed of the extraction process. However, both systemsachieve that increased speed by greatly sacrificing the accuracy of theextracted electrical characteristics. With the increasingly denseintegrated circuits, the accuracy of extraction systems becomes veryimportant. Specifically, as the transistors decrease in size, thetransistor delay time decreases such that the effects of interconnectwire delay increases. For long interconnect wire routes, over 50% of thesignal delay may be cause by interconnect wire delay. Thus, theimportance of obtaining accurate electrical characteristics ofintegrated circuit designs has greatly increased.

Since integrated circuit process technology continues to improve andthus allows for even denser circuitry, there is an ever-increasing needfor more accurate extraction systems that can fully analyze a fullintegrated circuit design in a reasonable amount of time. Thus, it wouldbe highly desirable to implement a fast yet more accurate system forperforming electrical characteristic extraction.

Electrical Characteristic Extraction Using Machine Learning

To improve the state of electrical characteristic extraction systemtechnology, the present invention introduces the application of machinelearning techniques to electrical characteristic extraction problem.Using machine-learning techniques, the system of the present inventionautomatically builds complex models of physical phenomena from a set oftraining data.

The system of the present invention begins by generating initial modelsusing a first set of trading data comprised of input points thatdescribe various physical circuits and the electrical characteristics ofthose input physical circuits (the output data). Experimental designtechniques are then applied to the initial models to refine those modelsby selecting additional training data points that provide the mostinformation. Feedback between the model generation and experimentaldesign force the system of the present invention to converge toward ahighly predictive model.

To create a training point, a set of physical dimension input parametersis first defined. For example, to generate an input test point for acapacitance extraction system, a set of interconnect line dimensions andinterconnect line spacing dimensions are defined. Then a field solver isused to determine an associated set of output points. Theelectromagnetic field solver then outputs a set of capacitance effectvalues for each interconnect line near the examined interconnect line.

The set of training data is known as D. Thus, the machine learningproblem can be stated as what is the best vector function Y=F(X) thatmaps an input. vector X to an output vector Y when provided with a setof known correct training data vectors D={(X_(i), Y_(i)): i=1 to n). Inthe context of a capacitance extraction system, an input vector X willconsist of the interconnect line dimensions, interconnect line spacingdimensions, layer spacing dimensions, and any other relevant informationneeded to determine the capacitance of a particular interconnect linearrangement. The output vector Y in a capacitance extraction system willbe the various capacitance values for the interconnect line arrangement.

FIG. 1 illustrates a conceptual diagram that describes the overall flowof a system implemented using the present invention. FIG. 1 will bedescribed with reference to FIGS. 2 and 3 that describe the overallmethod of the present invention in greater detail.

Extraction Model Creation

The top half of FIG. 1 describes the machine learning generation of amodel function for a set of input and output training data. FIG. 2provides a flow diagram for the model function creation using machinelearning.

The system begins dividing the extraction problem into a number ofsmaller extraction problems that are more manageable at step 205. Thesmaller extraction problems must be identifiable and separable from anoverall semiconductor integrated circuit design. Furthermore, there mustbe a reasonable method of determining the solutions for a set ofexamples of the smaller configuration. Manners of generating solutionsfor the set of examples include a highly accurate physics modeling (suchas a field solver) or actual measurements from physical implementations.Extremely complex smaller extraction problems are not advisable sincethose complex extraction problems will be very difficult to solve.

Next, a model is created for each of the smaller extraction problemsbeginning with step 210. The system creates an initial extraction modeldesign for a particular subdivided extraction problem at step 210. Thesubdivided smaller extraction problem should be parameterized byidentifying a specific set of profile parameters completely define thesubdivided extraction problem.

All parameters from a subdivided extraction problem that are constantmay be dropped. For example, the physical material used for a conductorwill directly affect the resistance of a conductive path. However, ifthe same material will be used for all implementations including theknown training set and future problems to solve, then that materialcomposition parameter may be dropped since it is constant for all cases.Similarly, the vertical distance between conductors on different metallayers affects the capacitance exhibited by the conductors and would beprovided to an electromagnetic field solver that models capacitance.However, since the vertical distance between different metal layers isconstant, such a vertical distance parameter may be dropped during thecreation of an extraction model for the subdivided extraction problem.The initial model creation may further require the specification ofmodel parameter such as priors that specify known information about theincoming data, as will be set forth in a later section.

Next, at step 220, a set of input data points are selected for thesubdivided extraction problem. The input training data points should becarefully selected so as to create the best model. Details on how theinput training data points are selected will be provided in the sectionon ‘experimental design.’

Referring back to the overview diagram of FIG. 1, some system is used togenerate the associated output data for the input profile configurations(the input training data). For some systems, the output data will begenerated by complex physical model. For example, an electromagneticfield-solver may be used to generate output capacitance values forspecific input configurations. Note that although certain constant termsmay be dropped when creating a machine learning model, those constantterms must be provided to the field-solver so that it creates the properoutput values. For some extraction problems, the output data may begenerated by physically measuring selected output values from specificconstructed input configurations. Specifically, referring to step 231 ofFIG. 2, associated output points are generated for the input trainingdata points using a highly accurate physics model or an actual physicalmeasurement.

Next, at step 235, the input training data points and associated outputpoints are used to train a model using machine learning. This isillustrated in FIG. 1 as “Model Creation”. Many differentmachine-learning techniques may be used to perform “model creation”. Forexample, Bayesian inference networks, Neural Networks, and SupportVector Machines (SVM) may be used to perform the machine learning. Thisdocument will focus on the use of Support Vector Machines. A number oftechniques may be used to accelerate the often computationally intensivetraining task of machine learning.

Referring again to FIG. 2, after creating and training the model withthe selected input training data, the trained models is tested at step250. If sufficient convergence has been achieved as tested at step 260,then the trained model may be used for extraction. If the model has notreached sufficient convergence, then feedback from the testing is usedto select additional input training data points at step 280. Forexample, if the model has problems creating sufficiently accurate outputfor certain areas of the input space, then additional training pointsfrom that area for the input space may be used to train the model. Thesystem then proceeds to further refine the model using the selectedinput data points at step 231.

Extraction Model Application

Referring back to the overview diagram of FIG. 1, once a set ofextraction models has been sufficiently trained, the set of extractionmodels may be used for extracting electrical features from an integratedcircuit design. The lower half of FIG. 1 conceptually illustrates howthe set of extraction models are used for extraction. FIG. 1 will bedescribed with reference to FIG. 3 that illustrating a flow diagram thatdescribes how extraction models may be used to extract electricalfeatures from an integrated circuit design.

As with prior extraction system systems, the overall extraction problemis first divided into individual smaller extraction problems. A standardmethod of dividing the overall extraction problem is to divide thesemiconductor integrated circuit into different nets as set forth instep 310.

Next, at step 320, the smaller extraction problems are further dividedinto small primitive sections that match the extraction models builtwith reference to FIGS. 1 and 2. For example, to perform capacitanceextraction on a net, the net is divided into different sections havingdifferent two-dimensional capacitance profiles. Then, at step 330, theiterative process of analyzing each of the different sections begins.

First, at step 330, the system selects a specific extraction modelassociated with the two-dimensional profile that matches the currentsection. Then at step 340, the system provides the data parameters fromthe current section that specifically define the current two-dimensionalprofile to the selected extraction model. The extraction model thenoutputs a predicted electrical characteristic value using the model itcreated from the training data.

At step 360, the system determines if this is the last different sectionof the net. If this is not the last section, then the system returns tostep 340 to analyze the next section of the net. If this is the finalsection of the net, then the system proceeds to step 380 where all theelectrical characteristic values for the different sections are combinedtogether to determine the overall electrical characteristics of the net.

Support Vector Machines

A Support Vector Machine (SVM) is a type of machine learning systembased on a nonlinear generalization of the Generalized Portraitalgorithm developed by Vapnik, Lerner, and Chervonekis in the 1960s.Vapnik has written several articles and books such as “The Nature ofStatistical Learning Theory” (1995) that set forth the details ofSupport Vectors Machines.

An advantage that Support Vector machines have over neural networks isthat an optimal solution can generally be determined. With neuralnetworks, one may determine a solution that appears good but is actuallyjust a local minimum in the solution space. Furthermore, evaluating asupport vector machine is generally easier than evaluating a neuralnetwork due to the difficult numerous tangent functions in neuralnetworks.

In general, the goal of a support vector machine is to take a known setof training data D where D={(X_(i), Y_(i)): i=1 to n) and determine afunction f(X_(i)) that has at most ε deviation from the actually obtaintargets Y_(i) for all the training data D and remain as flat aspossible. Any errors less than ε are considered acceptable. One maybegin by first examining linear functions.f(x)=(w•x)+b with w εX,b ε

  (1)where X denotes the space of input patterns and • denotes the dotproduct in X. The flatness means that one is seeking for small w. Onemethod of determining this is to minimize the Euclidean norm of theequation which is given by ∥W∥². Formally, this is a convex optimizationproblem that requires: $\begin{matrix}{{{Minimize}\quad\frac{1}{2}{w}^{2}}{{Subject}\quad{to}\quad\left\{ \begin{matrix}{{y_{i} - \left( {w \cdot x_{i}} \right) - b} \leq ɛ} \\{{\left( {w \cdot x_{i}} \right) + b - y_{i}} \leq ɛ}\end{matrix} \right.}} & (2)\end{matrix}$A convex optimization is not always feasible. Thus, one may wish toallow for a limited number of errors. Limited errors may be allowed byintroducing slack variables ξ_(i), ξ_(i)* to cope with the constraintsthat would make the system infeasible. This results in the Vapnikformulation of $\begin{matrix}{{{{Minimize}\quad\frac{1}{2}{w}^{2}} + {C{\sum\limits_{i = 1}^{l}\left( {\xi_{i} + \xi_{i}^{*}} \right)}}}{{Subject}\quad{to}\quad\left\{ \begin{matrix}{{y_{i} - \left( {w \cdot x_{i}} \right) - b} \leq {ɛ + \xi_{i}}} \\\begin{matrix}{{\left( {w \cdot x_{i}} \right) + b - y_{i}} \leq {ɛ + \xi_{i}^{*}}} \\{{\xi_{i} + \xi_{i}^{*}} \geq 0}\end{matrix}\end{matrix} \right.}} & (3)\end{matrix}$where the constant C>0 determines a trade-off between the flatness ofthe function and the amount up to which errors larger than ∈ areallowed. The formulation of equation (3) corresponds to the εinsensitive loss function described by: $\begin{matrix}{{\xi }_{ɛ}:=\left\{ \begin{matrix}0 & {{{{if}\quad{\xi }} \leq ɛ}\quad} \\{{\xi } - ɛ} & {otherwise}\end{matrix} \right.} & (4)\end{matrix}$FIG. 4 illustrates the situation graphically. Only points outside of theallowed error margin of ±ε contribute to the cost.

The optimization problem of equation (3) is often solved in its dualformation using Lagrange multipliers as set forth in the book byFletcher entitled “Practical Methods of Optimization” published in 1989.The Lagrange function is given as $\begin{matrix}\begin{matrix}{L:={{\frac{1}{2}{w}^{2}} + {C{\sum\limits_{i = 1}^{l}\left( {\xi_{i} + \xi_{i}^{*}} \right)}} - {\sum\limits_{i = 1}^{l}{\alpha_{i}\left( {ɛ + \xi_{i} - y_{i} + \left( {w \cdot x_{i}} \right) + b} \right)}} -}} \\{{\sum\limits_{i = 1}^{l}{\alpha_{i}^{*}\left( {ɛ + \xi_{i_{i}}^{*} + y_{i} - \left( {w \cdot x_{i}} \right) - b} \right)}} - {\sum\limits_{i = 1}^{l}\left( {{\eta_{i}\xi_{i}} + {\eta_{i}^{*}\xi_{i}^{*}}} \right)}}\end{matrix} & (5)\end{matrix}$where it is understood that the dual variables must be positive. Itfollows from the saddle point condition that the partial derivatives ofL with respect to the primal variables have to vanish for the optimalsituation. Thus: $\begin{matrix}{{\partial_{b}L} = {{\sum\limits_{i = 1}^{l}\left( {\alpha_{i}^{*} - \alpha_{i}} \right)} = 0}} & (6) \\{{\partial_{w}L} = {{w - {\sum\limits_{i = 1}^{l}{\left( {\alpha_{i}^{*} - \alpha_{i}} \right)x_{i}}}} = 0}} & (7) \\{{\partial_{\xi_{i}^{{(*})}}L} = {{C - \alpha_{i}^{{(*})} - \mu_{i}^{{(*})}} = 0}} & (8)\end{matrix}$Substituting equations (6), (7), and (8) into the Lagrange equation of(5) yields the formal dual optimization problem of: $\begin{matrix}{{Maximize}\left\{ {\begin{matrix}{{- \quad\frac{1}{2}}{\sum\limits_{i,{j = 1}}^{l}{\left( {\alpha_{i}^{*} - \alpha_{i}} \right)\left( {\alpha_{j}^{*} - \alpha_{j}} \right)\left( {x_{i} \cdot x_{j}} \right)}}} \\{{{- ɛ}{\sum\limits_{i = 1}^{l}\left( {\alpha_{i}^{*} + \alpha_{i}} \right)}} + {\sum\limits_{i = 1}^{l}{y_{i}\left( {\alpha_{i} - \alpha_{j}^{*}} \right)}}}\end{matrix}{Subject}\quad{to}\left\{ \begin{matrix}{{\sum\limits_{i = 1}^{l}\left( {\alpha_{i}^{*} - \alpha_{i}} \right)} = 0} \\{\alpha_{i},{\alpha_{j}^{*} \in \left\lbrack {0,C} \right\rbrack}}\end{matrix} \right.} \right.} & (9)\end{matrix}$Equation (7) may be reformatted into a Support Vector expansion where wcan be completely described as a linear combination of the training datax_(i) as follows: $\begin{matrix}{{w = {\sum\limits_{i = 1}^{l}{\left( {\alpha_{i} - \alpha_{i}^{*}} \right)x_{i}\quad{and}\quad{therefore}}}}\quad{{f(x)} = {{\sum\limits_{i = 1}^{l}{\left( {\alpha_{i} - \alpha_{i}^{*}} \right)\left( {x_{i} \cdot x} \right)}} + b}}} & (10)\end{matrix}$Using kernels, the Support Vector expansion may be expanded into thefollowing nonlinear form $\begin{matrix}{{w = {\sum\limits_{i = 1}^{l}{\left( {\alpha_{i} - \alpha_{i}^{*}} \right){\Phi\left( x_{i} \right)}\quad{and}\quad{therefore}}}}\quad{{f(x)} = {{\sum\limits_{i = 1}^{l}{\left( {\alpha_{i} - \alpha_{i}^{*}} \right){k\left( {x_{i} \cdot x} \right)}}} + b}}} & (11)\end{matrix}$Detailed information on the derivation of the nonlinear form can befound in the paper entitled “A Tutorial on Support Vector Regression” byAlex Smola and Bernhard Schölkopf (October, 1998).

Using the non linear Support Vector expansion, a system that performssupport vector regression may be created. Such a Support Vector Machineis illustrated in FIG. 5.

Thus, the combination output provided by the output unit 560 as setforth in equation (11) can accurately represent nearly any functionwithin an error of ∈. Thus, with the proper values for the weights((α_(i)−α_(i)*)) and support vectors (x₁, x₂, . . . , x_(m)), a supportvector machine can be used to accurately approximate a complex unknownfunction that specifies the electrical characteristics (the extractionproblem solution) for a particular configuration provided that theconfiguration can be complete parameterized as a set of input variables.As previously set forth, parameters that will be constant in both thetraining set and the actual extraction problems to be solved may bediscarded from the parameter set. Discarding constant parameterssimplifies the creation of the support vector machine.

Experimental Design Training Point Selection

Since machine-learning systems are completely dependent upon thetraining data, great care must be taken to select very good trainingdata points for training the machine learning system. Several differentmethods of selecting input data have been analyzed.

Boundary Value Input Data

A first method of selecting a set of training data input points is toselect a wide variety of boundary conditions for the input parameterspace. For example, one may wish to create training data containingevery permutation of the smallest, mean, and largest input parametervalues. An example of determining boundary values is set forth withreference to FIG. 6.

FIG. 6 illustrates a semiconductor interconnect line 610 surrounded byfour other parallel interconnect lines, two on the same layer and two onthe above layer. To determine the parasitic capacitance of interconnectline 610, the relevant physical characteristic information are the sizeof the five interconnect lines and the distance between analyzedinterconnect line 610 and the other interconnect lines.

Since the height of the interconnect lines is constant as set by thesemiconductor process, the height of the interconnect lines can beignored. Thus, one embodiment only considers the width of the fiveinterconnect lines (W₀, W₁, W₂, W₃, and W₄) to specify the size of theinterconnect lines. Similarly, the vertical distance separating thesemiconductor layers is constant and dictated by the semiconductorprocess Thus, the vertical distance between the analyzed interconnectline 610 and the other interconnect lines may be ignored. One embodimentof the present invention therefore only considers the horizontaldistance between the analyzed interconnect line 610 and the otherinterconnect lines (S₁, S₂, S₃, and S₄). Thus, the capacitance problemof FIG. 6 can be completely parameterized with nine physicalmeasurements: W₀, W₁, W₂, W₃, W₄, S₁, S₂, S₃, and S₄.

To test the boundary conditions and the mean conditions, everypermutation should be used as an input training point. Specifically, allcombinations of smallest, mean, and largest input parameter values forall nine measurements should be tested. Thus, there will be3*3*3*3*3*3*3*3*3=3⁹=19,683 training points. 19,683 is an unreasonablylarge number of training points to solve with field solvers and to usefor training the support vector machine.

Experimental Design Training Point Selection

One method of selecting training points employed by the presentinvention is to use experimental design techniques to optimize the inputpoint selection. The experimental design techniques are designed toobtain highly informative points such that a relatively small number oftraining points will be able to create a model with a highly accurateoutput for the cases that will be most likely encountered. Oneembodiment of the experimental design techniques used by the presentinvention is set forth with reference to FIG. 7.

First, at step 710, a particular extraction model is selected. Theextraction model will comprises a set of input parameters that fullydefined the information needed to determine the desired electricalcharacteristic (the output). As previously set forth, the inputparameters for a capacitance extraction may comprise the interconnectline widths and the interconnect line spacings that would be required tocalculated the capacitance. The extraction model is required during theexperimental design since selection of input points requires informationabout the model

Next, at step 720, the experimental design system determines an inputparameters range for each input parameter. The input parameters rangefor an input parameter defines the smallest possible input value and thelargest possible value for the input parameter.

Input Space Spanning Coverage

In order to be able to generate an acceptable output result no matterwhat legal input is given, the training data points should includepoints from every part the input space. In order to be able to generatean acceptable output result no matter what legal input is given, thetraining data points should include points from nearly every part theinput space. Thus, a set of ‘input space spanning’ coverage pointsshould be generated that span the entire input space range. But sincethe input space may be extremely large, careful consideration should beput into selecting the spanning coverage input points.

Not all of the input parameters are extremely informative. Some inputparameters are very critical for determining the output and other inputparameters only slightly affect the output. Thus, to reduce the size ofthe ‘critical’ input space, the critical input parameters need to beidentified as set forth in step 730. To determine the critical inputspace, a large set of input points and associated output points areprovided to a critical point identification program. A critical pointidentification program carefully examines the input points andassociated output points to determine which input parameters have thegreatest effect on the output. A number of different critical pointidentification programs are well-known in the art. One example of acritical input point identification program is the ‘Gosset’ programdescribed in the paper entitled “A New Approach to the Construction ofOptimal Designs” by R. H. Hardin and N. J. A. Sloane in the Journal ofStatistical Planning and Inference”, vol. 37, 1993, pp. 339-369.

After running the critical point identification program, a set ofcritical input parameters have been identified. Next, at step 740, a setof critical input space spanning points are determined. The criticalinput space spanning points are intended to evenly cover the entirecritical input space. The creation of a set of critical input spacespanning points is similar to the well-known ‘orange-packing’ problemwherein the task is to determine the optimal packing configuration ofspheres into a box. Specifically, an input space spanning pointselection problem for system with three inputs is similar to theorange-packing problem since the three dimensions of the input space canbe viewed as three dimensions of the box and the selection of the inputpoints is similar to the selection of the orange locations. The centerof each orange can be viewed as the input point and the surrounding areaof the orange is similar to the input region space ‘covered’ by thatinput point. The object is to select the input points (orange locations)that most densely fill the input space (the orange box).

A number of programs exist for solving the orange packing problem in anumber of dimensions. Thus, to select the critical input space spanningpoints, the number of dimensions and the size of each dimension areprovided to one of the programs such that the program outputs a set ofcritical input space spanning points. One program that may be used isprovided in the paper entitled “Computer-Generated Minimal (and Larger)Response Surface Designs” by R. H. Hardin and N. J. A. Sloane. Thus,step 740 generates a set of points that evenly covers the input space.

Critical Input Range Coverage

The entire input range of each input parameter is not equally important.For example, when two interconnect lines are close to each other thenslight changes in the interconnect line spacing can dramatically affectthe capacitance but if the interconnect lines are far apart then slightchanges in the interconnect line spacing only negligibly affect thecapacitance. Furthermore, certain feature sizes are far more likely tobe encountered than other feature sizes. Thus, to obtain the best model,a large number of input points should come from the critical areas thatsignificantly affect the output. Fewer points should come from theportion of the input range that does not affect the output much.

The present invention uses a probabilistic method of implementing such asystem. Specifically, at step 740, a probability distribution isassigned to each input parameter. The probability distribution isdesigned such that the highest probability is located in the criticalportions of the input range and the lower probability areas are locatedin the non critical areas. Once a probability distribution has beenassigned to each input parameter, then, at step 750, the probabilitydistributions are used to generate a set of input points that willconcentrate on the most important regions of the input space.

An example will be provided with reference to FIGS. 8, 9A, and 9B. FIG.8 illustrates a capacitance extraction problem wherein an interconnectline 820 of width W₀ is set between interconnect line 810 of width W₁ adistance S₁ to the left and interconnect line 830 of width W₂ a distanceS₂ to the right. The objective is to determine the capacitance ofinterconnect line 820 comprising of ground plane capacitance C₀,capacitance C₀₁ from interconnect line 810, and capacitance C₀₂ frominterconnect line 830.

As set forth above, small changes in interconnect line spacing fordistant interconnect lines do not significantly affect the capacitancesuch that few input points should specify distant interconnect lines.But small changes in interconnect line spacing for nearby interconnectwires drastically change the capacitance, thus a large number of inputpoints should specify interconnect lines that are close together.However, very few (if any) interconnect lines spacings should be lessthan the minimum allowed line spacing S_(min). Thus, a probabilitydistribution for the line spacings may appear as illustrated in FIG. 9A.

The interconnect wire widths affect the capacitance but not asdrastically as the interconnect line spacings. But since mostinterconnect wires will have approximately the same width, most inputpoints should be around the average width, W_(avg). Thus, a probabilitydistribution for the interconnect wire widths may appear as illustratedin FIG. 9B. Note that a gamma probability function with appropriateparameters may be used to generate the probability function illustratedin FIG. 9B.

To generate a set of critical range input points for the capacitancecase of FIG. 8, the probability distributions of FIG. 9A and FIG. 9B maybe used. Specifically, interconnect line separations S₁ and S₂ should beselected using the probability distribution of FIG. 9A and theinterconnect line widths W₀, W₁, and W₂ should be selected using theprobability distribution of FIG. 9B.

Profile Case Coverage

Depending on the semiconductor process that is being used, certain inputpoints will appear very frequently. These frequently appearing inputpoints should be very well covered by the training data used to createmachine-learning models in order to produce very accurate results forthose very frequent occurring cases.

FIG. 10 illustrates a cross-sectional view of a first interconnect linewith a width of W_(norm) and is flanked on the right by three moreinterconnect lines. In most semiconductor manufacturing processes, theinterconnect lines are generally all approximately the same width. Inthis case, most interconnect lines will be a width of W_(norm) such thata large number of ‘profile’ cases should cover situations havinginterconnect lines of a width of W_(norm).

Many semiconductor designs use fixed wiring grids wherein allinterconnect lines are aligned on a defined wiring grid. The allowablepositions for interconnect lines are sometimes referred to as ‘tracks.’In the example configuration of FIG. 10, the wiring grid spaces theinterconnect lines apart by a distance of S_(track) on center. In such agridded architecture, most nearby interconnect lines will be separatedby an integer multiple of S_(track) on center (S_(track), 2*S_(track),3*S_(track), etc.). Thus, a set of profile configurations contain allpermutations of interconnect lines an integer multiple Of S_(track) oncenter should be made into training points.

By selecting permutations of all the common ‘profile’ cases as inputtraining points, the system will be nearly guaranteed to generate veryaccurate answers for the most commonly encountered situations in a realsemiconductor integrated circuit.

To fully describe the present invention, examples of the application ofthese machine-learning techniques will be provided in the followingsections. Specifically, the application of machine learning tointerconnect line capacitance extraction problems and interconnect lineresistance extraction problems will be described.

Capacitance Extraction

Semiconductor integrated circuits use metal layers with interconnectwires to carry electrical signals between various circuit elements.These interconnect wires are susceptible to performance degradation dueto parasitic capacitance. For example, FIG. 11A illustrates an idealdigital signal pulse. Note that the ideal digital signal pulse has animmediate transition between voltage levels such that the digital signalpulse appears very square. However, no real signal pulse can match theideal digital signal pulse. One reason that such an ideal cannot beachieved is that parasitic capacitance in all circuits degrades thesignal.

Capacitance Effects

FIG. 11B illustrates how the parasitic capacitance on interconnect wiremay be modeled. The capacitance may be modeled as an “RC”(Resistor-Capacitor) circuit. The resistor 1120 lowers the voltage andthe capacitor 1110 must be charged or drained upon a voltage statechange. FIG. 11C illustrates how the ideal digital signal pulse of FIG.11A is more likely to appear in a real world application. Note that theresistance of resistor 1120 and the need to charge the capacitor 1110slow the voltage rise at the beginning of the digital signal pulse.Similarly, the voltage drop at the end of the digital signal pulse isslowed.

Severe capacitance can cause a circuit to malfunction. For example FIG.12A illustrates an ideal digital signal pulse and FIG. 12B illustratesthe ideal digital signal pulse of FIG. 12A after it has been affected bysevere parasitic capacitance. As illustrated in FIG. 12B, the signalfails to reach the full active voltage level when it is affected bysevere capacitance. Thus, parasitic capacitance may cause the read-outcircuit to sample an incorrect voltage level.

As illustrated with reference to FIGS. 11B and 11C, the resistance andcapacitance of an interconnect wire affect the ability of thatinterconnect wire to carry a signal. Thus, it is desirable to determinethese resistance and capacitance values to determine if the performancedegradation is too severe. The resistance value of an interconnect wirecan be relatively easily estimated using the geometry of theinterconnect wire and the material composition of that interconnectwire. However, the capacitance value of an interconnect wire depends onthe interconnect wire's proximity to other interconnect wires. Thus, onemust consider the effects of all the other nearby interconnect wires toextract the capacitance of a particular interconnect wire.

A Capacitance Extraction Example

In a typical integrated circuit design, all interconnect wires arevertical or horizontal. This orthogonal wiring architecture allows forcertain efficiencies in extraction of the capacitance values from aninterconnect wire layout. FIGS. 13A to 13H will be used to provide anexample of how capacitance may be extracted from an integrated circuitdesign.

FIG. 13A illustrates the top view an example layer of interconnectwiring for an integrated circuit that uses “Manhattan” (restricted toonly horizontal and vertical) interconnect wire routing. The layoutexample of FIG. 13A contains four different “nets” (interconnect wires)1310, 1320, 1330, and 1340. Each net illustrated in FIG. 13A isconstructed only from horizontal interconnect wire segments and verticalinterconnect wire segments as is required by Manhattan wire routing. Forexample, net 1310 is constructed from horizontal wire segment 1311,vertical wire segment 1312, and horizontal wire segment 1313. Similarly,net 1320 is constructed from horizontal interconnect wire segment 1321and vertical interconnect wire segment 1312. (Although the exampleprovided with reference to FIGS. 13A to 13H uses Manhattan wiring forsimplicity of explanation, the teachings present invention are notlimited to extraction on integrated circuits containing Manhattaninterconnect line wiring.)

To provide an example of capacitance extraction, the capacitance of afirst horizontal portion of critical net 1310 in FIG. 13A will bedetermined. In common capacitance extraction parlance, the interconnectwiring of net 1310 will be the “aggressor” wire and the other wiresegments that effect the capacitance of net 1310 will be the “victim”wires.

Limiting the Capacitance Extraction Problem

The first step in determining the capacitance of net 1310 is to limitthe scope of the capacitance extraction problem. Interconnect wires thatare far from net 1310 will only have a very tenuous effect on thecapacitance of net 1310 and therefore can be ignored. Thus, FIG. 13Billustrates a “halo” drawn around net 1310 that will limit the scope ofother interconnect wires considered to materially affect the capacitanceof net 1310. Specifically, all the interconnect wires within the shadedregion of FIG. 13C will be considered to affect the capacitance of net1310. Any interconnect wires not within the shaded region of FIG. 13Cwill be considered to have no material affect the capacitance of net1310.

The “halo” illustrated in FIG. 13B only appears to limit the scope intwo-dimensions along the same layer of the aggressor net 1310. However,the halo actually extends in all three dimensions including the verticaldimension not shown. Specifically, interconnect wires on other nearbymetal layers are also considered. However, other interconnect layers arenot mentioned in this example for simplicity. In one embodiment of thepresent invention, the capacitance extraction system limits the scope ofthe problem in the vertical dimension by only considering interconnectwires in metal layers within two layers of the aggressor net.

The most common current technique for computing capacitance effects(also known as extracting capacitance values) due to a three-dimensionalconfiguration of interconnecting wires is to decompose the problem intoa series of two-dimensional profile sections that have capacitancevalues that are generally proportional to their length. The totalcapacitance of the three-dimensional net configuration is thendetermined by calculating a weighted sum of the individualtwo-dimensional profiles where the weights are the lengths of thedifferent two-dimensional profiles. This technique is performed alongtwo different dimensions such that there is both a horizontal andvertical scan of the interconnect wire section.

Thus, the next step in extracting the capacitance in a Manhattan routedintegrated circuit is to divide the problem into a series of sectionswith different two-dimensional profiles. Each section then has acapacitance value that is estimated by multiplying the length of thesection with a capacitance-per-length value of the two-dimensionalprofile. The capacitance-per-length values of the various differenttwo-dimensional profiles are calculated by running a two-dimensionalfield solver on the two-dimensional profiles.

For example FIGS. 13D to 13H illustrate the horizontal scan of the firstsection along interconnect wire 1311 of net 1310 in integrated circuitof FIG. 13A. The scan begins on the left side with FIG. 13D. FIG. 13Dillustrates the interconnect wiring of FIG. 13A with a firsttwo-dimensional section 1381 of interconnect wire 1311 duplicated belowthe integrated circuit. As illustrated in FIG. 13D, the duplicatedsection of interconnect wire 1311 is surrounded by an environmentunchanging along one (horizontal) dimension within the “halo” untilhorizontal interconnect wire 1331 intersects with vertical interconnectwire 1332. To calculate the capacitance for this first two-dimensionalsection of interconnect wiring 1381, a modeled capacitance per unitlength of section 1381 is multiplied by the length of section 1381 (thelength of interconnect wire 1331).

At the point where horizontal interconnect wire 1331 intersects withvertical interconnect wire 1332, the surrounding environment aroundinterconnect wire 1311 of net 1310 changes. Thus, a second differentsection 1382 of net 1310 is duplicated below the integrated circuit inFIG. 13E. The short section 1382 of FIG. 13E is used to take intoaccount the capacitance effect of vertical interconnect wire 1332 onhorizontal interconnect wire 1311 of net 1310. To determine thecapacitance of section 1382, an extraction system multiplies a modeledcapacitance per unit length of section 1382 by the length of section1382 (the width of vertical interconnect wire 1332).

Next, FIG. 13F illustrates the interconnect wiring for an integratedcircuit of FIG. 13A with a third two-dimensional section 1383 of net1310 duplicated below the integrated circuit. In the third section 1383,horizontal wire 1311 of net 1310 is only affected by horizontal wire1321. The capacitance effect of horizontal wire 1321 on interconnectwire 1311 per unit length is multiplied by the horizontal distance fromvertical interconnect wire 1332 to vertical interconnect wire 1322.Next, a fourth two-dimensional section 1384 of net 1310 illustrated inFIG. 13G is taken into account by multiplying the capacitance effect ofsection 1384 by the width of vertical interconnect wire 1322.

Finally, FIG. 13H illustrates a fifth section 1385 of net 1310 thatconsists of the final section of horizontal interconnect wire 1311. Asillustrated in FIG. 13H, there are no other interconnect wires withinthe halo around section 1385, thus there is not significant capacitanceeffect for section 1385 of net 1310.

The fully modeled capacitance along interconnect wire 1311 of net 1310is calculated by summing together the modeled capacitance of each of theindividual sections 1381 to 1385 illustrated in FIGS. 13D to 13H,respectively. The capacitance of each individual section is calculatedby multiplying the length of that section by the capacitance per unitlength of that section profile. Thus the total capacitance forinterconnect wire 1311 of net 1310 maybe calculated as follows:${\sum\limits_{i = 1381}^{1385}{l_{i} \times C_{i}}} = {{l_{1381} \times C_{1381}} + {l_{1382} \times C_{1382}} + {l_{1383} \times C_{1383}} + {l_{1384} \times C_{1384}} + {l_{1385} \times C_{1385}}}$Where

-   -   I_(i)=the length of interconnect wiring section i; and    -   C_(i)=the capacitance per unit length of interconnect wiring        section i.        Determining the Capacitance of a Section

Referring back to FIG. 13D, section 1381 consists of the aggressor net1311 d surrounded by victim nets 1331 d and 1321 d. FIG. 14A illustratesa detailed view of how the interconnect wires of section 1381 mayappear. Capacitance is a physical attribute that is determined by thesize, shape, and proximity of conductive materials. The capacitanceproblem of FIG. 14A can be defined by the length of the section L, thewidth of each wire section (W₀, W₁, and W₂), the distance between thevictim wire 1431 and the aggressor wire 1411 (S₁), and the distancebetween the victim wires 1421 and the aggressor wire 1411 (S₃).

By ignoring the limited capacitive effects at the ends of the section,the problem can be solved in a two-dimensional realm to determine atwo-dimensional capacitance value. Thus, the two-dimensional capacitanceproblem can be expressed in terms of the five variables W₀, W₁, W₂, S₁,and S₂. The two-dimensional capacitance value is then multiplied by thelength of the section to determine the capacitance of the section.

FIG. 14B illustrates a two-dimensional cross section of the capacitanceproblem of FIG. 14A. A two-dimensional field solver can be used to solvethe two-dimensional capacitance problem of FIG. 14B. The output of thecapacitance extraction is the capacitance between the aggressor wire andthe first victim wire C₀₁, the capacitance between the aggressor wireand the first victim wire Co₂, and the capacitance between the aggressorwire and the ground plane C₀. Thus, the capacitance problem for sectionshaving the two-dimensional profile of FIGS. 14A and 14B can be expressedin terms of five input variables (W₀, W₁, W₂, S₁, and S₂) and threeoutput values (C₀₁, C₀₂, and C₀). The different output values are oftenadded together and expressed as a single capacitance value C.

More Difficult Capacitance Extraction Examples

The capacitance extraction example set forth in the previous section wasa very simplified capacitance extraction problem. Most real worldcapacitance problems are much more difficult.

For example, FIG. 15 illustrates a more complex capacitance extractionproblem. Specifically, the example of FIG. 15 contains two additionalinterconnect wires (1560, 1570) on a higher metal layer that should betaken into consideration.

The vertical distance between the different metal layers affects thecapacitance calculation. However, the vertical distance between thedifferent metal layers in a particular semiconductor process is a fixedconstant value. Thus, in a model is built specifically for a particularsemiconductor process and metal layer, the vertical distance may beignored since it does not vary. Therefore, the capacitance problem forsections having the profile illustrated in FIG. 15 has nine inputvariables (W₀, W₁, W₂, W₃, W₄, S₁, S₂, S₃, and S₄) and five outputvalues (C₀₁, C₀₂, C₀₃, C₀₄, and C₀).

FIG. 16 illustrates yet an even more complex capacitance extractionproblem. The capacitance extraction for the profile of FIG. 16 must takeinto account the capacitance effects from two interconnect wires on thesame metal layer (1620, or 1630), two interconnect wires on a highermetal layer (1660, or 1670), and two interconnect wires on a lower metallayer (1680, or 1690). The capacitance problem for sections having theprofile of FIG. 16 has thirteen input variables (W₀, W₁, W₂, W₃, W₄, W₅,W₆, S₁, S₂, S₃, S₄, S₅, and S₆) and seven output values (C₀₁, C₀₂, C₀₃,C₀₅, C₀₆, and C₀).

Capacitance Determination by Interpolation

Many more different two-dimensional capacitance profiles exist and mustbe handled by a capacitance extraction system. As set forth previously,a vector of input variables can fully define the capacitance extractionproblems for the different wiring profiles. Most prior art capacitanceextraction systems handle the task of by having several large tablesthat contain known capacitance values for different two-dimensionalprofiles. A different capacitance value table exists for each differenttwo-dimensional profile.

FIG. 17 illustrates a flow diagram that describes how some prior artcapacitance extraction systems operate to estimate the capacitance of aparticular net using sets of capacitance profile tables. Initially, atstep 1710, the system first divides the net into several differentsections wherein each different section has a different two-dimensionalcapacitance profile. This step was previously described with referenceto FIGS. 13D to 13H.

Next, at step 1720, the system begins an iterative process to determinethe capacitance of each different section. The first step in theanalysis of a particular section is to identify the capacitance tablefor the two-dimensional profile that matches the two-dimensional profileof the section being analyzed as set forth in step 1730. A simplepattern matching system is used to perform this step.

Next, at step 1740, the system locates the closest matching entries inthe selected capacitance table. If an exact match is found, then thetwo-dimensional capacitance of that particular section is known. If noexact match is found, then the system interpolates between the closestentries in the table to determine a two-dimensional capacitance value.Many different systems may be used to perform the interpolation such asa linear interpolation, a least-squares fit, or a polynomial function.

Finally, at step 1750, the system multiplies the determined capacitanceper unit length value for that section by the length of that section.The product is stored for future reference.

Is At step 1760, the system determines if all the different sections ofthe net have been analyzed. If more sections of interconnect wire needto be analyzed, the system returns to step 1730 to analyze the nextinterconnect wire section. Otherwise the system proceeds to step 1780.At step 1780, the system sums together the capacitance values computedfor all the different sections of the net to determine an overallcapacitance of the net.

The pre-computed table and interpolation system set forth in FIG. 17requires extremely large tables to accurately determine capacitancevalues in semiconductor layouts for current semiconductor processtechnologies. Future semiconductor processes will be even more dense andthus will present even more difficult capacitance extraction problems.

Capacitance Extraction Using Machine Learning

As previously set forth, the system of the present invention uses largeamounts of capacitance data generated by field-solvers and uses thatcapacitance data to build a model for predicting capacitance usingmachine learning. The machine-learning built model is then used togenerate capacitance values for novel profiles.

In one embodiment, the system uses a support vector machine. FIG. 18provides a conceptual diagram that describes the system of the presentinvention with reference to an implementation that builds support vectormachine models for capacitance extraction using machine learning. FIG.18 will be described with reference to FIGS. 19 and 20 that describe themodel creation and model application methods, respectively, in greaterdetail.

Extraction Model Creation

The top half of FIG. 18 describes the creation of a support vectormachine model for capacitance determination. FIG. 19 provides a flowdiagram for the support vector machine model creation using machinelearning. Referring to FIG. 18, the system begins with an experimentalmodel design to select a set of interconnect wire profile configurationsthat will be used as input data for a field solver. The experimentaldesign techniques are also used to generate the most informative datapoints. Referring to FIG. 19, the first step 1910 is to create a set ofall the different two-dimensional wiring profiles. Next, at step 1920,the system begins to systematically build a model for each differentwiring profile.

At step 1930, a loop begins for creating a model. Specifically, at step1930, an iterative process begins to create a support vector machinemodels for each different two-dimensional wiring profile. At step 1930,an initial set of input data points are selected for the currenttwo-dimensional wiring profile. Referring back to FIG. 18, the profileconfigurations (the input data) are provided to field solver. Thefield-solver is used to generate a set of known output capacitancevalues that will be used as training data.

Referring back to FIG. 19, at step 1931, the field-solver is used todetermine capacitance values for the selected input data points. Then,at step 1935, the input data points and associated output capacitancevalues are used to train a support vector machine model to predictcapacitance values for that two-dimensional wiring profile. At step1940, the system determines if sufficient convergence has been reachedfor the model. If the model has not reached sufficient convergence, thenfeedback from the testing is used to select additional input trainingdata points at step 1980. The system then proceeds back step 1931 tofurther refine the support vector machine model using the newly selectedinput data training points.

If sufficient convergence has been achieved as tested at step 1940, themodel is ready to be used for capacitance extraction and the systemproceeds to step 1960. At step 1960, a determination is made to see ifall the needed extraction models have been created. If all the neededextraction models have not yet been created the method returns back tostep 1930 to create an extraction model for the next two-dimensionalwiring profile. After creating the extraction models for the differenttwo-dimensional wiring profiles, the models may be used with anextraction system.

Extraction Model Application

Returning to FIG. 18, once the support vector machine models have beensufficiently trained, the support vector machine models may be used forextracting capacitance. The lower half of FIG. 18 conceptuallyillustrates how the support vector machine models are used inextraction.

FIG. 20 illustrates a flow diagram that describes how a support vectormachine model is used to extract the capacitance of a net. As with priorsystems, the net is first divided into different interconnect wiringsections having different two-dimensional capacitance profiles. Then, atstep 2020, the iterative process of analyzing each different sectionbegins.

At the first step in the iterative process, step 2030, the systemidentifies the support vector machine model associated with thetwo-dimensional profile that matches the current wiring section. Then atstep 2040, the data parameters that define the current two-dimensionalprofile are provided to the selected support vector machine model toobtain a predicted capacitance per unit length value from the supportvector machine model. Then, at step 2050, the extraction systemmultiplies the predicted two-dimensional capacitance per unit lengthvalue by the length of the current interconnect wiring section todetermine the capacitance of the interconnect wiring section. Thiscalculated capacitance is stored for later use.

At step 2060, the system determines if this is the last interconnectwiring section of the net. If this is not the last interconnect wiringsection, then the system returns to step 2030 to analyze the nextinterconnect wiring section.

Referring again to step 2060, if this is the final interconnect wiringsection then the system proceeds to step 2080. At step 2080, the systemsums together all the capacitance values for the different interconnectwiring sections to determine the overall capacitance of the net.

Resistance Extraction

It is also desirable to extract the resistance of interconnect lines.Resistance on interconnect lines can cause delays and lower outputvoltages. By extracting interconnect line resistance values, thecircuits may be simulated to ensure that the circuits perform asdesired.

Calculating the resistance of an interconnect line is generally a lesscomplicated task than calculating the capacitance of an interconnectline. For example, the calculation of the resistance for a singlestraight interconnect line is simply the resistance per unit lengthmultiplied by the length of the interconnect line. The resistance perunit length can generally be calculated when the cross sectional area ofinterconnect line and the material composition of the interconnect lineare known.

The cross-section area for a typical rectangular interconnect line issimply the width of the interconnect line multiplied by the height ofthe interconnect line (the height of the metal layer). Since the heightof the metal layer and the material composition of the interconnect lineare fixed for a particular semiconductor manufacturing process, the onlyparameters required when modeling a straight interconnect line are thewidth of the interconnect line and the length of the interconnect line.For such a simple model, a support vector machine is generally notnecessary and not used.

However, most interconnect wires are not simply straight lines. Theinterconnect wires will turn corners, switch layers, and fork out tomore than one termination point. All of these complex factors can effectthe resistance of the interconnect line. However, the machine-learningtechniques of the present invention can be used account for such complexfactors after training upon a sufficient number of training cases.

To perform resistance extraction using the machine-learning techniquesof the present invention, the same overall procedure is used asdescribed in the previous sections. Specifically, the resistanceextraction problem is first decomposed into smaller simpler resistanceextraction sub problems that can be used to represent any interconnectwire. Each smaller resistance extraction sub problem is then analyzed toidentify a set of parameters that fully define the smaller resistanceextraction sub problem. Then, resistance extraction support vectormachine models are built for all of the smaller resistance extractionsub problems by creating training data sets and training machinelearning models. However, no support vector machine model is typicallyneeded for the simple straight line interconnect wire with a rectangularcross section.

Resistance Extraction Sub Problems To apply the resistance extractionmodels, the resistance extraction software would first decompose a giveninterconnect wire into the various smaller resistance extraction subproblems. Then, for each smaller resistance extraction sub problem, theparameters that define that smaller resistance extraction problem aresupplied to a model trained for such a resistance extraction subproblem. For the simple straight line interconnect wire with arectangular cross section, no machine learning model is needed.

A simple rectangle for straight line interconnect line runs and FIGS.21, 22, 23, and 24 describe different shapes that an interconnect wiremay be decomposed into. As previously set forth, the-straight line is atrivial case. The resistance of a straight line interconnect line runcan be calculated by multiplying the resistance per unit length (asdetermined from the cross section and material composition) by thelength of the straight line run.

FIG. 21 illustrates a simple interconnect line corner. The subextraction problem of FIG. 21 can be used to determine the resistancebetween port 2110 and port 2120 for corners. The input parameters areinterconnect line widths (W₁ and W₂). The lengths of the two legs of thecorner are short such that most of the interconnect line is handled witha simple straight-forward model. The corner outputs a single resistancevalue.

FIG. 22 illustrates a three-port “T” shape that may be present ininterconnect lines. The sub extraction problem of FIG. 22 can be used todetermine the resistance between any of the three ports 2210, 2220, and2230 for such three port “T” shapes. The input parameters areinterconnect line widths W₀, W₁, and W₂ near ports 2210, 2220, and 2230,respectively. The three-port “T” shape of FIG. 22 outputs a threeresistance values.

FIG. 23 illustrates a small step shape that an interconnect line mayinclude. The step shape of FIG. 23 may occur when an interconnect linetakes a small jog to avoid an obstacle. The extraction problem of FIG.21 can be used to determine the resistance between port 2310 and port2320 for such small jogs. The input parameters are interconnect linewidths W₀ and W₁ near ports 2310 and 2320, respectively and the stepsize S₀. The lengths of the two legs of the jog are short such that mostof the interconnect line is handled with a simple straight-forwardrectangular model. The jog sub extraction problem outputs a singleresistance value.

FIG. 24 illustrates a complex four-port shape that rarely occurs. Thefour-port extraction problem of FIG. 24 can be used to determine the sixdifferent resistance values between the various different ports 2400,2410, 2420, and 2430 as illustrated in FIG. 24. The input parameters forthe four-port shape extraction problem of FIG. 24 are the fourinterconnect line widths W₀, W₁, W₂ and W₃. The four-port shapeextraction support vector machine model outputs six different resistancevalues for the six different resistances illustrated in FIG. 24.

Decomposing into Resistance Extraction Sub Problems

An example of how a net is decomposed into resistance extraction subproblems will be presented with reference to FIGS. 25A, 25B, 25C, and25D. FIG. 25A illustrates a net with three end points P1, P2, and P3.The resistance can be calculated from any endpoint to any otherendpoint.

To calculate the resistance from endpoint P1 to endpoint P2, the net isfirst decomposed into resistance extraction sub problems. FIG. 25Billustrates the net of FIG. 25A after it has been divided into simplerectangles and the extraction sub problems of FIGS. 21 to 24. Next, allthe extraction sub problems between endpoint P1 and endpoint P2 aredetermined. The full list of sub extraction problems between endpoint P1and endpoint P2 are illustrated in FIG. 25C. Thus by analyzing the fivesimple rectangles and four machine learning sub problems of FIG. 25C andadding the resistances together, the resistance between endpoint P1 andendpoint P2 may be determined.

The resistance from endpoint P1 to endpoint P3 is calculated in the samemanner. The net is first decomposed into resistance extraction subproblems as illustrated by FIG. 25B. Next, all the extraction subproblems between endpoint P1 and endpoint P3 are determined. The fulllist of sub extraction problems between endpoint P1 and endpoint P3 areillustrated in FIG. 25D. Thus, the resistance between endpoint P1 andendpoint P2 may be determined by adding to together the resistances ofthe five simple rectangles and four machine learning sub problems ofFIG. 25D.

The foregoing has described methods arrangement for extractingcapacitance in integrated circuit designs using machine learningcapacitance models. It is contemplated that changes and modificationsmay be made by one of ordinary skill in the art, to the materials andarrangements of elements of the present invention without departing fromthe scope of the invention.

1. A method of constructing a model for estimating electricalcharacteristics for an extraction sub problem, said method comprising:identifying a set of physical parameters of a set of physicalmeasurements that define said extraction sub problem; selecting a set oftraining cases for said specific extraction sub problem, each of saidtraining cases including an associated set of said physicalmeasurements; solving said specific extraction sub problem for each ofsaid training cases using said associated set of physical measurementsas an input to an accurate physics based model to generate an associatedoutput; and training a support vector machine using said associated setof physical measurements and associated output as training data.
 2. Themethod of constructing a model for estimating electrical characteristicsas claimed in claim 1 wherein said electrical characteristic comprisescapacitance.
 3. The method of constructing a model for estimatingelectrical characteristics as claimed in claim 1 wherein said electricalcharacteristic comprises resistance.
 4. The method of constructing amodel for estimating electrical characteristics as claimed in claim 1wherein said extraction sub problem comprises a section of interconnectwire and nearby interconnect wiring within a define halo.
 5. The methodof constructing a model for estimating electrical characteristics asclaimed in claim 1 wherein said extraction sub problem comprises asection of interconnect wiring.
 6. The method of constructing a modelfor estimating electrical characteristics as claimed in claim 1 whereinone of said physical parameters comprises a spacing between a pair ofinterconnect lines.
 7. The method of constructing a model for estimatingelectrical characteristics as claimed in claim 1 wherein one of saidphysical parameters comprises a wire width.
 8. The method ofconstructing a model for estimating electrical characteristics asclaimed in claim 1 wherein one of said physical parameters comprises awire length.
 9. The method of constructing a model for estimatingelectrical characteristics as claimed in claim 1 wherein selecting a setof training cases comprises randomly generating input parameters with agamma probability distribution.
 10. The method of constructing a modelfor estimating electrical characteristics as claimed in claim 1 whereinselecting a set of training cases comprises selecting a set offrequently occurring profile cases.
 11. A computer readable mediumcontaining a set of computer instructions for constructing a model forestimating electrical characteristics for an extraction sub problemdefined by a set of physical parameters of a set of physicalmeasurements, said computer instructions performing the steps of:selecting a set of training cases for said specific extraction subproblem, each of said training cases including an associated set of saidphysical measurements; solving said specific extraction sub problem foreach of said training cases using said associated set of physicalmeasurements as an input to an accurate physics based model to generatean associated output; and training a support vector machine using saidassociated set of physical measurements and associated output astraining data.
 12. The computer readable medium as claimed in claim 11wherein said electrical characteristic comprises capacitance.
 13. Thecomputer readable medium as claimed in claim 11 wherein said electricalcharacteristic comprises resistance.
 14. The computer readable medium asclaimed in claim 11 wherein said extraction sub problem comprises asection of interconnect wire and nearby interconnect wiring within adefine halo.
 15. The computer readable medium as claimed in claim 11wherein said extraction sub problem comprises a section of interconnectwiring.
 16. The computer readable medium as claimed in claim 11 whereinone of said physical parameters comprises a spacing between a pair ofinterconnect lines.
 17. The computer readable medium as claimed in claim11 wherein one of said physical parameters comprises a wire width. 18.The computer readable medium as claimed in claim 11 wherein one of saidphysical parameters comprises a wire length.
 19. The computer readablemedium as claimed in claim 11 wherein selecting a set of training casescomprises randomly generating input parameters with a gamma probabilitydistribution.
 20. The method of constructing a model for estimatingelectrical characteristics as claimed in claim 1 wherein selecting a setof training cases comprises selecting a set of frequently occurringprofile cases.